Light-induced hydrogen evolution from hydrogenated amorphous silicon: Hydrogen diffusion by formation of bond centered hydrogen

被引：11

作者：

Tanimoto, H. ^{[1
]}

Arai, H. ^{[1
]}

Mizubayashi, H. ^{[1
]}

Yamanaka, M. ^{[2
]}

Sakata, I. ^{[2
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 07期

基金：

日本学术振兴会;

关键词：

DEFECT DENSITY; DANGLING BONDS; SURFACE; METASTABILITY;

D O I：

10.1063/1.4865166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The light-induced hydrogen evolution (LIHE) from amorphous (a-) Si:H by the order of at. % is observed during white light soaking (WLS) of 100-400 mW/cm(2) at 350-500K or ultra violet light soaking (UVLS) of 30-120 mW/cm(2) at 305-320K in a vacuum. The thermal desorption spectroscopy indicates that LIHE originated from bonded hydrogen takes place through the diffusion of light-induced mobile hydrogen (LIMH) with the activation energy of 0.5 eV. LIMH is assigned to bond centered hydrogen and the hydrogen diffusion process becomes prominent when LIMH can leave from a-Si:H such under light soaking in a vacuum above room temperature. For H-2 in microvoids, the hydrogen evolution rate is governed by the surface barrier and its activation energy of 1.0 eV in dark decreases to 0.4 eV under WLS or UVLS. (C) 2014 AIP Publishing LLC.

引用

页数：10

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