Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge

被引：37

作者：

Shen, L. H. ^{[1
]}

Li, X. F. ^{[1
]}

Zhang, J. ^{[1
]}

Ma, Y. M. ^{[1
]}

Wang, F. ^{[1
]}

Peng, G. ^{[1
]}

Cui, Q. L. ^{[1
]}

Zou, G. T. ^{[1
]}

机构：

[1] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 84卷 / 1-2期

关键词：

D O I：

10.1007/s00339-006-3580-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-density hexagonal aluminum nitride (h-AlN) nanowires were synthesized through the direct reaction of Al with nitrogen gas without catalyst and template using a direct arc discharge method. The as-grown AlN nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The h-AlN nanowires have a diameter in the range 20-70 nm and a length of several tens of micrometers. Vapor-solid growth mechanisms can be employed to explain the formation of the h-AlN nanowires.

引用

页码：73 / 75

页数：3

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