Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge

High-density hexagonal aluminum nitride (h-AlN) nanowires were synthesized through the direct reaction of Al with nitrogen gas without catalyst and template using a direct arc discharge method. The as-grown AlN nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The h-AlN nanowires have a diameter in the range 20-70 nm and a length of several tens of micrometers. Vapor-solid growth mechanisms can be employed to explain the formation of the h-AlN nanowires.