Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

被引：0
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作者：
Shen, Longhai [1 ]
Cheng, Taimin [2 ]
Wu, Lijun [1 ]
Li, Xuefei [3 ]
Cui, Qiliang [3 ]
机构：
[1] School of Science, Shenyang Ligong University, Shenyang, 110168, China
[2] Department of Mathematics and Physics, Shenyang Institute of Chemical Technology, Shenyang, 110142, China
[3] National Laboratory of Superhard Materials, Jilin University, Changchun, 130012, China
来源：
Journal of Alloys and Compounds | 2008年 / 465卷 / 1-2期
关键词：
AlN nanowires with hexagonal structure were successfully synthesized by direct reaction of aluminum with nitrogen gas using arc discharge method. The wurtzite AlN nanowires have an average diameter of 40 nm and a length of several tens micrometer. The growth direction of most single-crystalline AlN nanowires is perpendicular to the [0 0 1] direction; while it is also found that the AlN nanowires grow along [0 0 1] direction. The vapor-solid growth mechanism can explain the formation of the AlN nanowires. Raman spectroscopy studies of the AlN nanowires reveal that the stress is rather low and the crystallinity is close to bulk AlN. The UV spectrum of the AlN nanowires shows that the absorption edge at 6.23 eV is comparable with that of the bulk AlN. The photoluminescence of the AlN nanowires suggests that the emission band at 506 nm may be ascribed to the deep level defect due to nitrogen vacancy. © 2007 Elsevier B.V. All rights reserved;
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页码：562 / 566
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