Design of an Electroluminescent Device Based on Metal-Insulator-Semiconductor Structure

Immunoassay in biomedical field has attracted more and more attention, and surface plasmon technology is an effective detection method. Electroluminescent devices are suitable for excitation light source of surface plasma technology because of its low energy consumption and small size. In this paper, a light-emitting chip based on MIS structure is designed, and its electroluminescence principle and its internal electron tunneling principle are studied. Simultaneously, the structure and production process of the chip are proposed. The plasma oscillation frequency of doped silicon and the asymptotic frequency corresponding to the SPP dispersion curve of each interface in each MIS junction are calculated and analyzed, and the relationship between the asymptotic frequency and the wavelength of the light emission spectrum of the device is deduced. Finally, the luminescence spectrum wavelength corresponding to the asymptotic frequency of each interface is obtained, which lays a theoretical foundation for future experiments to verify whether the asymptotic frequency of each interface of the MIS junction is consistent with the peak value of the device luminescence spectrum.