Silicon fiber with p-n junction

被引：12

作者：

Homa, D. ^{[1
]}

Cito, A. ^{[1
]}

Pickrell, G. ^{[1
]}

Hill, C. ^{[1
]}

Scott, B. ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24060 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 12期

关键词：

FABRICATION; FILAMENTS;

D O I：

10.1063/1.4895661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 mu m and core diameters of 20-800 mu m. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers. (C) 2014 AIP Publishing LLC.

引用

页数：3

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