Problems related to the avalanche and secondary breakdown of silicon P-N junction

被引:10
|
作者
Puritis, T
机构
[1] Laboratory of Semiconductor Physics, Riga Technical University, Riga, LV-1658
来源
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 05期
关键词
D O I
10.1016/S0026-2714(96)00252-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper provides an analysis of some still unsolved problems related to avalanche and secondary breakdown. An evaluation is given of four models of energy accumulation, necessary for impact ionization: Wolfs diffusion model, Shockley's model of 'lucky' electrons, Ridely's model of 'lucky-drift' and Gribnikov's model of 'light' electrons. It is shown that impact ionization is mainly realized in conformity with the model of 'light' charge carriers. It is indicated that the bright avalanche breakdown channels, called microplasmas, are encircled by a weakly shining ring-shaped cloud. Apparently this cloud is caused by the'light' charge carriers. As the p-n junction is heated under the influence of a high avalanche breakdown current and reaches a certain temperature, the luminous clouds expand and by force of the magnetic pinch created by the current itself tend towards the centre, where they meet and assume the form of a ring. Then the weakly shining cloud (pre-mesoplasma) contracts rapidly and bright circular mesoplasma lights up (secondary breakdown appears) which moves in the direction of higher temperature and higher voltage until it localizes at a large defect or contact. A model is proposed according to which pre-mesoplasma and mesoplasma is a Row of 'light' charge carriers. This model allows us to explain many peculiarities of pre-mesoplasma and mesoplasma. Copyright (C) 1997 Elsevier Science Ltd.
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页码:713 / 719
页数:7
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