Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor

被引：12
|
作者：
Hsu, Hsing-Hui [1 ]
Lin, Horng-Chih [1 ,2 ]
Chan, Leng
Huang, Tiao-Yuan
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Inst Elect, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Natl Nano Device Labs, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 03期
关键词：
Double gate; fluctuation; nanowire (NW); polycrystalline silicon (poly-Si); THIN-FILM-TRANSISTOR; MOSFETS; CHANNEL;
D O I：
10.1109/LED.2008.2011568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation.
引用
收藏
页码：243 / 245
页数：3
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