GAMMA-RADIATION SPECTRA OF 1200 MeV ELECTRONS IN THICK BERYLLIUM, SILICON AND TUNGSTEN SINGLE CRYSTALS

被引：0

作者：

Bochek, G. L. ^{[1
]}

Deiev, O. S. ^{[1
]}

Kulibaba, V., I ^{[1
]}

Maslov, N., I ^{[1
]}

Ovchinnik, V. D. ^{[1
]}

Potin, S. M. ^{[1
]}

Schramenko, B., I ^{[1
]}

机构：

[1] Kharkiv Inst Phys & Technol, Natl Sci Ctr, UA-61108 Kharkov, Ukraine

来源：

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2019年 / 03期

关键词：

CHANNELING-RADIATION; ANGULAR-DISTRIBUTION; PARTICLES; BRIGHT; QUANTA;

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

Gamma radiation spectra of 1200 MeV electrons from the single crystals of the beryllium 1.2 mm thick, silicon 1.5 mm and 15 mm thick and tungsten 1.18mm thick along of the crystallographic axes were measured. Also spectral-angular distributions of gamma radiation from the silicon single crystals 1.5 mm thick along of the crystallographic axes < 100 >, < 110 > and < 111 > were measured. On the basis of these measurements the gamma-radiation spectra for the different solid angles up to 6.97 x 10(-6) sr were obtained.

引用

页码：86 / 93

页数：8

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