Gate process control using spectroscopic ellipsometry

被引：0
|
作者：
Hodges, JS [1 ]
Lin, YL [1 ]
Peters, RM [1 ]
机构：
[1] KLA Tencor Corp, Richardson, TX 75081 USA
来源：
SOLID STATE TECHNOLOGY | 2004年 / 47卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metrology techniques such as atomic force micro cross-sectional tunneling electron microscopy, while able to provide full 2D profile metrology with the requisite precision, have inadequate through-put to allow for proper statistical sampling necessary to control a volume manufacturing line. TEM has the additional drawback of being destructive process. An alternative, optical CD metrology based on spectroscopic ellipsometry can be used instead. It is currently being utilized for inline process control and product disposition at the gate lithograph and etch process steps on 130nm-generation logic devices manufactured in Texas Instruments' DMOS6 300mm wafer fab.
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页码：37 / +
页数：3
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