Ellipsometry-based process monitoring and control for ultrathin gate dielectrics

被引：0
|
作者：
Massoud, HZ
机构：
来源：
PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS | 1997年 / 97卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper describes the use of automated in situ real-time high-temperature ellipsometry in the monitoring of the growth of ultra-thin dielectrics and its use in the temperature control of rapid-thermal processing oxidation equipment. The control process is based on oxide-thickness monitoring while executing temperature control and ending the oxide growth process when the desired thickness is reached. Results are presented in the growth of 10 nm thick oxides.
引用
收藏
页码：208 / 216
页数：9
相关论文
共 50 条
  • [1] Process metrology for ultrathin gate dielectrics
    Rudolph Technologies, Flanders, NJ, United States
    [J]. Semiconductor International, 2001, 24 (09) : 79 - 90
  • [2] Monitoring nitrogen profiles in ultrathin gate dielectrics
    Narayanan, S
    Ramkumar, K
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (07) : F15 - F17
  • [3] Fast and Sensitive Ellipsometry-Based Biosensing
    Li, Kewu
    Wang, Shuang
    Wang, Liming
    Yu, Hui
    Jing, Ning
    Xue, Rui
    Wang, Zhibin
    [J]. SENSORS, 2018, 18 (01):
  • [4] Metal layer monitoring in DRAM production by use of spectroscopic ellipsometry-based scatterometry
    Wang, Mike
    Chen, Jay
    Cheng, Tony
    Chang, Chung, I
    Wang, Tings
    [J]. 2006 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, 2006, : 25 - +
  • [5] Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate
    Yeh, M
    Fang, SP
    Tsau, BJ
    Huang, CC
    Lin, BS
    Fu, S
    Chen, JC
    Freed, R
    Dziura, TG
    Slessor, MD
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 1135 - 1143
  • [6] Gate process control using spectroscopic ellipsometry
    Hodges, JS
    Lin, YL
    Peters, RM
    [J]. SOLID STATE TECHNOLOGY, 2004, 47 (04) : 37 - +
  • [7] Spectroscopic ellipsometry-based aptasensor platform for bisphenol a detection
    Sahin, Samet
    Ustundag, Zafer
    Caglayan, Mustafa Oguzhan
    [J]. TALANTA, 2023, 253
  • [8] Ultrathin gate dielectrics for silicon nanodevices
    Hirose, M
    Mizubayashi, W
    Khairurrijal
    Ikeda, M
    Murakami, H
    Kohno, A
    Shibahara, K
    Miyazaki, S
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2000, 27 (5-6) : 383 - 393
  • [9] Theoretical investigation of ultrathin gate dielectrics
    Demkov, AA
    Zhang, XD
    Loechelt, H
    [J]. VLSI DESIGN, 2001, 13 (1-4) : 135 - 143
  • [10] Nature of breakdown in ultrathin gate dielectrics
    Pey, K. L.
    Tung, C. H.
    Lo, V. L.
    Li, X.
    [J]. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 239 - +
12345