CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

被引：34

作者：

Gottlob, H. D. B.

Echtermeyer, T.

Mollenhauer, T.

Efavi, J. K.

Schmidt, M.

Wahlbrink, T.

Lemme, M. C.

Kurz, H.

Czernohorsky, M.

Bugiel, E.

Osten, H. -J

Fissel, A.

机构：

[1] AMO GMBH, AMICA, D-52074 Aachen, Germany

[2] Leibniz Univ Hannover, Inst Semicond Devices & Elect Mat, D-30167 Hannover, Germany

[3] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 06期

关键词：

high-k gate dielectric; metal gate electrode; epitaxial gate dielectric; gadolinium oxide (Gd2O3); CMOS integration; silicon on insulator(SOI);

D O I：

10.1016/j.sse.2006.04.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial gadolinium oxide (Gd2O3) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time. (c) 2006 Elsevier Ltd. All rights reserved.

引用

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页码：979 / 985

页数：7

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