Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere

被引:35
|
作者
Oh, SH
Park, CG [1 ]
Park, C [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, POSTECH, Pohang 790784, South Korea
[2] Hyundai Elect Ind Co Ltd, Semicond Adv Res Div, Icheon 467701, South Korea
关键词
diffusion; rutheuim; sputtering; transmission electron microscopy;
D O I
10.1016/S0040-6090(99)00700-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thermal stability of RuO2/Ru bilayer prepared by r.f. magnetron (reactive) sputtering was investigated in an oxygen atmosphere (1 atm). Diffusion barrier property and electrical conductivity were maintained up to 750 degrees C for 10 min without the oxidation of the Ru layer, but the volatilization of RuO2 took place both at the surface and within the film layer. The oxidation of the Ru layer, which is a thermally activated and diffusion-limited process, started with the formation of RuO2 protrusions on the surface of bilayer at 800 degrees C. This could be possible at the initial stage of the Ru oxidation process because of the metal (Ru) diffusion in rutile structure which is faster than oxygen diffusion. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:118 / 123
页数:6
相关论文
共 50 条
  • [41] THERMAL-CONDUCTIVITY OF RUO2
    GLADUN, A
    GLADUN, C
    HOFMANN, A
    PIETRASS, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 149 - 153
  • [43] The Deposition Of Ru And RuO2 Films For DRAM Electrode
    Schaekers, M.
    Capon, B.
    Detavernier, C.
    Blasco, N.
    ATOMIC LAYER DEPOSITION APPLICATIONS 6, 2010, 33 (02): : 135 - 144
  • [44] EQCM study of Ru and RuO2 surface electrochemistry
    Juodkazyte, J.
    Vilkauskaite, R.
    Stalnionis, G.
    Sebeka, B.
    Juodkazis, K.
    ELECTROANALYSIS, 2007, 19 (10) : 1093 - 1099
  • [45] Field emission properties of RuO2 thin film coated on carbon nanotubes
    Chen, Ching-An
    Lee, Kuei-Yi
    Chen, Yi-Min
    Chi, Ji-Guang
    Lin, Shan-Shan
    Huang, Ying-Sheng
    VACUUM, 2010, 84 (12) : 1427 - 1429
  • [46] Oxygen evolution on well-characterized mass-selected Ru and RuO2 nanoparticles
    Paoli, Elisa A.
    Masini, Federico
    Frydendal, Rasmus
    Deiana, Davide
    Schlaup, Christian
    Malizia, Mauro
    Hansen, Thomas W.
    Horch, Sebastian
    Stephens, Ifan E. L.
    Chorkendorff, Ib
    CHEMICAL SCIENCE, 2015, 6 (01) : 190 - 196
  • [47] Metallorganic chemical vapor deposition of Ru and RuO2 using ruthenocene precursor and oxygen gas
    Park, SE
    Kim, HM
    Kim, KB
    Min, SH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (01) : 203 - 209
  • [48] Atomic Layer Deposition of Ru/RuO2 Thin Films Studied by In situ Infrared Spectroscopy
    Park, S. K.
    Kanjolia, R.
    Anthis, J.
    Odedra, R.
    Boag, N.
    Wielunski, L.
    Chabal, Y. J.
    CHEMISTRY OF MATERIALS, 2010, 22 (17) : 4867 - 4878
  • [49] Enhanced thermal stability of RuO2/polyimide interface for flexible device applications
    Music, Denis
    Schmidt, Paul
    Chang, Keke
    MATERIALS RESEARCH EXPRESS, 2017, 4 (09):
  • [50] Scanning tunnelling microscope studies of growth of RuO2(110) thin layer on Ru(0001)
    Zhang Han-Jie
    Lu Bin
    Lu Yun-Hao
    Huang Han
    Li Hai-Yang
    Bao Shi-Ning
    He Pei-Mo
    CHINESE PHYSICS, 2006, 15 (08): : 1892 - 1895