Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere

被引：35
|
作者：
Oh, SH
Park, CG [1 ]
Park, C [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, POSTECH, Pohang 790784, South Korea
[2] Hyundai Elect Ind Co Ltd, Semicond Adv Res Div, Icheon 467701, South Korea
来源：
THIN SOLID FILMS | 2000年 / 359卷 / 01期
关键词：
diffusion; rutheuim; sputtering; transmission electron microscopy;
D O I：
10.1016/S0040-6090(99)00700-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal stability of RuO2/Ru bilayer prepared by r.f. magnetron (reactive) sputtering was investigated in an oxygen atmosphere (1 atm). Diffusion barrier property and electrical conductivity were maintained up to 750 degrees C for 10 min without the oxidation of the Ru layer, but the volatilization of RuO2 took place both at the surface and within the film layer. The oxidation of the Ru layer, which is a thermally activated and diffusion-limited process, started with the formation of RuO2 protrusions on the surface of bilayer at 800 degrees C. This could be possible at the initial stage of the Ru oxidation process because of the metal (Ru) diffusion in rutile structure which is faster than oxygen diffusion. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：118 / 123
页数：6
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