Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment

The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH3 plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to NH3 gas plasma, the series resistance of the transistor decreased considerably. It exhibited electrical properties, such as a field-effect mobility of 6 cm(2)/V . s, a threshold voltage of 0.21 V, and a subthreshold swing of 0.23 V/dec.