Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment

被引：54

作者：

Kim, Sangwook ^{[1
]}

Park, Jaechui ^{[1
]}

Kim, Changjung ^{[1
]}

Song, Hun ^{[1
]}

Kim, Sunil ^{[1
]}

Park, Sungho ^{[1
]}

Yin, Huaxiang ^{[1
]}

Lee, Hyung-Ik ^{[2
]}

Lee, Eunha ^{[2
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Lab, Yongin 446712, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin 446712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 04期

关键词：

Amorphous gallium-indium-zinc-oxide thin-film transistors (a-GIZO TFTs); plasma treatment; self-aligned top-gate structure; series resistance; ZNO;

D O I：

10.1109/LED.2009.2014181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH3 plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to NH3 gas plasma, the series resistance of the transistor decreased considerably. It exhibited electrical properties, such as a field-effect mobility of 6 cm(2)/V . s, a threshold voltage of 0.21 V, and a subthreshold swing of 0.23 V/dec.

引用

页码：374 / 376

页数：3

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