Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

被引：1
|
作者：
Asaka, Naohiro [1 ]
Harasawa, Ryo [1 ]
Lu, Shulong [2 ]
Dai, Pan [2 ]
Tackeuchi, Atsushi [1 ]
机构：
[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215028, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期
关键词：
QUANTUM-WELLS; SEMICONDUCTORS; POLARIZATION; ELECTRONS; EPITAXY;
D O I：
10.1063/1.4868873
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] CATHODOLUMINESCENCE OF P-TYPE GAAS
    PANKOVE, JI
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 298 - &
  • [42] REFLECTIVITY IN P-TYPE GAAS
    MCNICHOL.JL
    BURKIG, VC
    HAYES, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (08): : 854 - &
  • [43] RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS - COMMENT
    ZEEB, E
    EBELING, KJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5729 - 5729
  • [44] Effect of strain on the carrier mobility in heavily doped p-type Si
    Romano, Lucia
    Piro, Alberto Maria
    Grimaldi, Maria Grazia
    Bisognin, Gabriele
    Napolitani, Enrico
    De Salvador, Davide
    PHYSICAL REVIEW LETTERS, 2006, 97 (13)
  • [45] Carrier mobility and strain effect in heavily doped p-type Si
    Romano, Lucia
    De Bastiani, Riccardo
    Miccoli, Cristina
    Bisognin, Gabriele
    Napolitani, Enrico
    De Salvador, Davide
    Grimaldi, Maria Grazia
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 135 (03): : 220 - 223
  • [46] Isolation of p-type carbon δ-doped layers in GaAs by ion bombardment
    Boudinov, H.
    Pesenti, G. C.
    Danilov, I.
    Zvonkov, B. N.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (01) : 132 - 136
  • [47] ELECTRICAL MEASUREMENTS OF BANDGAP SHRINKAGE IN HEAVILY DOPED P-TYPE GAAS
    KLAUSMEIERBROWN, ME
    MELLOCH, MR
    LUNDSTROM, MS
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) : 7 - 11
  • [48] Deep levels in rhodium-doped p-type MOCVD GaAs
    Majid, A
    Iqbal, MZ
    Dadgar, A
    Bimberg, D
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 362 - 366
  • [49] CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS
    ABDURAKHMANOV, KP
    MIRAKHMEDOV, S
    TESHABAEV, A
    KHUDAIBERDIEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 393 - 397
  • [50] ELECTRO-ABSORPTION IN CHROMIUM-DOPED P-TYPE GAAS
    MOROZOVA, VA
    OSTROBORODOVA, VV
    SHEREMETEV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1394 - 1395
12345