Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

被引：1

作者：

Asaka, Naohiro ^{[1
]}

Harasawa, Ryo ^{[1
]}

Lu, Shulong ^{[2
]}

Dai, Pan ^{[2
]}

Tackeuchi, Atsushi ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215028, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

QUANTUM-WELLS; SEMICONDUCTORS; POLARIZATION; ELECTRONS; EPITAXY;

D O I：

10.1063/1.4868873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 50 条

[31] INFLUENCE OF RE-EMISSION ON CARRIER TRANSPORT IN P-TYPE GAAS
ROMANOVA, EP
YUFEREV, VS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1430 - 1432
[32] EXCITON SPIN RELAXATION IN InAs/GaAs QUANTUM DOTS
Kurtze, H.
Yakovlev, D. R.
Reuter, D.
Wieck, A. D.
Bayer, M.
11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
[33] ULTRAFAST RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN P-TYPE AND INTRINSIC GAAS
NINTUNZE, N
OSMAN, MA
PHYSICAL REVIEW B, 1994, 50 (15): : 10706 - 10714
[34] Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
Othonos, Andreas
Zervos, Matthew
NANOSCALE RESEARCH LETTERS, 2011, 6 : 1 - 5
[35] Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
Andreas Othonos
Matthew Zervos
Nanoscale Research Letters, 6
[36] Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs
Zangooie, S
Schubert, M
Thompson, DW
Woollam, JA
APPLIED PHYSICS LETTERS, 2001, 78 (07) : 937 - 939
[37] k • p calculations for double p-type δ-doped quantum wells in GaAs
Rodriguez-Vargas, Isaac
Mora-Ramos, Miguel E.
SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (02) : 100 - 112
[38] Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
Iba, Satoshi
Saito, Hidekazu
Spiesser, Aurelie
Watanabe, Suguru
Jansen, Ron
Yuasa, Shinji
Ando, Koji
APPLIED PHYSICS EXPRESS, 2012, 5 (02)
[39] Investigation of hole mobility in GaInP/(In)GaAs/GaAs p-type modulation doped heterostructures
Yang, QK
Li, AZ
Chen, JX
CHINESE PHYSICS LETTERS, 1999, 16 (01): : 50 - 52
[40] Hole spin relaxation in p-type GaAs quantum wires investigated by numerically solving fully microscopic kinetic spin Bloch equations
Lu, C.
Zulicke, U.
Wu, M. W.
PHYSICAL REVIEW B, 2008, 78 (16)

← 1 2 3 4 5 →