Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

被引：1

作者：

Asaka, Naohiro ^{[1
]}

Harasawa, Ryo ^{[1
]}

Lu, Shulong ^{[2
]}

Dai, Pan ^{[2
]}

Tackeuchi, Atsushi ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215028, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

QUANTUM-WELLS; SEMICONDUCTORS; POLARIZATION; ELECTRONS; EPITAXY;

D O I：

10.1063/1.4868873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3-3.1 ns at 10-100K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10-77K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism. (C) 2014 AIP Publishing LLC.

引用

页数：4

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