1.1-μm-range InGaAsVCSELs for high-speed optical interconnections

被引：18

作者：

Suzuki, Naofumi ^{[1
]}

Hatakeyama, Hiroshi ^{[1
]}

Tokutome, Keiichi ^{[1
]}

Fukatsu, Kimiyoshi ^{[1
]}

Yamada, Mitsuki ^{[1
]}

Anan, Takayoshi ^{[1
]}

Tsuji, Masayoshi ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Device Res Labs, Shiga 5200833, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 9-12期

关键词：

high-speed modulation; optical interconnections; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);

D O I：

10.1109/LPT.2006.877353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mu m. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up to 19 GHz and no degradation under 70 degrees C, 1000-h automatic power control tests. Error-free 20-Gb/s operations were also achieved.

引用

页码：1368 / 1370

页数：3

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