1.1-μm-range InGaAsVCSELs for high-speed optical interconnections

被引：18
|
作者：
Suzuki, Naofumi [1 ]
Hatakeyama, Hiroshi [1 ]
Tokutome, Keiichi [1 ]
Fukatsu, Kimiyoshi [1 ]
Yamada, Mitsuki [1 ]
Anan, Takayoshi [1 ]
Tsuji, Masayoshi [1 ]
机构：
[1] NEC Corp Ltd, Syst Device Res Labs, Shiga 5200833, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 9-12期
关键词：
high-speed modulation; optical interconnections; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs);
D O I：
10.1109/LPT.2006.877353
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed vertical-cavity surface-emitting lasers for optical interconnections operating at 1.07 mu m. The active layers of the devices are InGaAs-GaAs multiple quantum-wells, which are suitable for high-speed operation and high reliability. The devices exhibit -3-dB modulation bandwidths up to 19 GHz and no degradation under 70 degrees C, 1000-h automatic power control tests. Error-free 20-Gb/s operations were also achieved.
引用
收藏
页码：1368 / 1370
页数：3
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