GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template

被引：3

作者：

Kuo, C. W. ^{[1
]}

Chang, L. C. ^{[1
]}

Kuo, Cheng-Huang ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 21期

关键词：

InGaN-GaN; light-emitting diode (LED); nano; template; INGAN-GAN; LEDS; LAYERS; LITHOGRAPHY; IMPROVEMENT; BRIGHTNESS; EFFICIENCY; BLUE;

D O I：

10.1109/LPT.2009.2031247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using self-aligned SiO nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

引用

页码：1645 / 1647

页数：3

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