Manipulating exciton fine structure in quantum dots with a lateral electric field

被引：171
|
作者：
Gerardot, B. D. [1 ]
Seidl, S.
Dalgarno, P. A.
Warburton, R. J.
Granados, D.
Garcia, J. M.
Kowalik, K.
Krebs, O.
Karrai, K.
Badolato, A.
Petroff, P. M.
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] LMU, Ctr NanoSci, D-80539 Munich, Germany
[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2431758
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. (c) 2007 American Institute of Physics.
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页数：3
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