Ion-induced self-organized dot and ripple patterns on Si surfaces

被引：27
|
作者：
Ziberi, Bashkim [1 ]
Frost, Frank [1 ]
Hoeche, Thomas [1 ]
Rauschenbach, Bernd [1 ]
机构：
[1] Leibniz Inst Oberflachenmodifizierung eV, D-04318 Leipzig, Germany
来源：
VACUUM | 2006年 / 81卷 / 02期
关键词：
ion sputtering; self-organization; pattern formation;
D O I：
10.1016/j.vacuum.2006.03.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The evolution of the surface topography during low-energy Ar+ ion beam erosion of silicon surfaces is studied. Depending on ion-beam parameters, a variety of nanostructured patterns with a very narrow size distribution can be developed on the surface. By rotating the sample, ordered nanodots are formed for ion energies >= 300 eV at normal and oblique ion incidence angles with respect to the surface normal. Dots evolving at oblique ion incidence of 75 degrees show a very high degree of ordering with a mean dot size gimel similar to 30 nm. Without sample rotation at near normal ion incidence angle (similar to 15 degrees), remarkably ordered ripple structures develop with a wavelength gimel similar to 45 nm. The degree of ordering and size homogeneity of these nanostructures increases with erosion time eventually leading to the most ordered self-organized patterns on Si surfaces reported so far. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：155 / 159
页数：5
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