Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment

被引:100
|
作者
Keller, Adrian [1 ,2 ]
Facsko, Stefan [1 ]
机构
[1] Forschungszentrum Dresden Rosendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, DK-8000 Aarhus C, Denmark
关键词
nanopatterning; ion sputtering; surface morphology; continuum theory; BEAM EROSION; LITHIUM-FLUORIDE; ROUGHENING INSTABILITY; SELF-ORGANIZATION; SILICON SURFACES; DOT PATTERNS; GE SURFACES; EVOLUTION; BOMBARDMENT; MORPHOLOGY;
D O I
10.3390/ma3104811
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si surfaces have attracted attention both from a fundamental and an application related point of view. This paper summarizes the theoretical basics of ion-induced pattern formation and compares the predictions of various continuum models to experimental observations with special emphasis on the morphology development of Si surfaces during sub-keV ion sputtering.
引用
收藏
页码:4811 / 4841
页数:31
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