Impedance characteristics of the semiconductor chip of an IMPATT diode with the abrupt p-n junction

被引:0
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作者
Gershenzon, EM
Levites, AA
Ponomarev, AF
Smetanin, AI
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RADIOTEKHNIKA I ELEKTRONIKA | 1997年 / 42卷 / 07期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:884 / 889
页数:6
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