Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 10(3), the field effect mobility is about 0.86 cm(2)/Vs, the saturation current is 2.75 x 10(-7) A/mu m, and the lowest gate leakage current is 10(-12) A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.