Ultra-High Gain Modified SCLN based DC-DC Converter with Reduced Device Current Stress

被引:0
|
作者
Sahoo, Gyana Manjari [1 ]
Banavath, Satish Naik [1 ]
Chub, Andrii [2 ]
Vinnikov, Dmitri [2 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Dharwad 580011, Karnataka, India
[2] Tallinn Univ Technol, Dept Elect Power Engn & Mechatron, Tallinn, Estonia
关键词
High gain boost converter (HGBC); Ultra High gain boost converter (UHGBC); Switched capacitor (SC); Switched inductor (SL); Switched capacitor inductor network (SCLN);
D O I
10.1109/RTUCON56726.2022.9978808
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The unavailability of a DC transformer entails a DC-DC converter as an indispensable part while connecting DC generating stations into the DC grids. The conventional boost converter does not meet the required voltage demands as it attains a maximum gain of 5 to 6 in pragmatic conditions. Increasing the duty cycle ratio to attain higher voltage gain further leads to higher power losses, resulting in downgraded converter efficiency. Therefore, increasing demand for higher voltage transfer ratios at lower duty cycles expedites the proposals of various novel high gain boost converter typologies. This paper proposes an ultra-high gain boost converter which results in lesser voltage stress on power devices. Moreover, a unique solution is presented that reduces the current stress on the switch and diode in the existing Switched-Capacitor Inductor Network (SCLN) based high gain boost converter topology. The paper also presents the analysis, simulation, and experimental validation of the proposed topology highlighting its merits and demerits.
引用
收藏
页数:5
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