Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

Highly oriented ((2) over bar 0 1) Ga2-xZnxO3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)' under 254 nm ultraviolet excitation, and the maximum was obtained at x = 0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-xZnxO3 (x = 0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for beta-Ga2-xZnxO3 (x = 0.8) photodetector were observed with 254 nm ultraviolet illumination.