β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetector Based on Annealed Sapphire Substrate

被引：0

作者：

Qian, L. X. ^{[1
]}

Xia, Y. ^{[1
]}

Wu, Z. H. ^{[1
]}

Sheng, T. ^{[1
]}

Liu, X. Z. ^{[1
]}

Zhang, W. L. ^{[1
]}

Li, Y. R. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Microelect & Solid State Elect, Chengdu, Sichuan, Peoples R China

来源：

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年

关键词：

vaccum annealing; sapphire; beta-Ga2O3; solar-blind photodetector; deep-ultraviolet photodetector; FABRICATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

beta-Ga2O3 solar-blind deep-ultraviolet photodetectors were fabricated based on as-supplied and annealed c-plane sapphire substrates. It was found the beta-Ga2O3 epitaxial film exhibited better crystalline quality, and accordingly the fabricated device performed significantly improved characteristics, for example, higher responsibility (153 A/W), by adopting annealed sapphire substrate. However, the degradations in dark current and response time were also observed on the photodetector based on annealed sapphire substrate, possibly attributed to higher carrier mobility and longer carrier lifetime in beta-Ga2O3 epitaxial film respectively.

引用

页数：2

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