A Solar-Blind β-Ga2O3 Nanowire Photodetector

被引：53

作者：

Weng, W. Y. ^{[1
,2
]}

Hsueh, T. J. ^{[3
]}

Chang, S. J. ^{[1
,2
]}

Huang, G. J. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Nano Device Labs, Tainan 741, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 10期

关键词：

beta-Ga2O3; nanowires; photodetector; solar-blind; LIGHT-EMITTING-DIODES; INGAN-GAN; STABILITY; GAIN; FILM;

D O I：

10.1109/LPT.2010.2044570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the growth of beta-Ga2O3 nanowires by heating the GaN-sapphire template and the fabrication of a beta-Ga2O3 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the beta-Ga2O3 nanowires were around 10 m and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0 x 10(-4) A/W.

引用

页码：709 / 711

页数：3

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