Bistable electroluminescence of tunneling silicon MOS structures

被引：4
|
作者：
Altukhov, PD
Bulgakov, AG
Ivanov, GV
Kuzminov, EG
机构：
[1] A.F. Ioffe Phys.-Technical Instiute, St.-Petersburg 194021
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 02期
关键词：
surfaces and interfaces; tunneling; luminescence;
D O I：
10.1016/S0038-1098(97)00151-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The recombination radiation line of surface two-dimensional electrons and nonequilibrium holes is observed in electroluminescence spectra of tunneling [100] silicon MOS diodes under tunneling injection of holes at T = 1.5 K. The tunneling current and electroluminescence in these structures are bistable due to existence of two ways of the hole injection. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：103 / 106
页数：4
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