Bistable electroluminescence of tunneling silicon MOS structures

被引：4
|
作者：
Altukhov, PD
Bulgakov, AG
Ivanov, GV
Kuzminov, EG
机构：
[1] A.F. Ioffe Phys.-Technical Instiute, St.-Petersburg 194021
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 02期
关键词：
surfaces and interfaces; tunneling; luminescence;
D O I：
10.1016/S0038-1098(97)00151-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The recombination radiation line of surface two-dimensional electrons and nonequilibrium holes is observed in electroluminescence spectra of tunneling [100] silicon MOS diodes under tunneling injection of holes at T = 1.5 K. The tunneling current and electroluminescence in these structures are bistable due to existence of two ways of the hole injection. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：103 / 106
页数：4
相关论文
共 50 条
  • [31] Bright electroluminescence from planar structures on porous silicon
    Babanov, YE
    Prokaznikov, AV
    Rud, NA
    Svetovoy, VB
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (02): : R7 - R8
  • [32] Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers
    Gaburro, Z
    Pucker, G
    Bellutti, P
    Pavesi, L
    SOLID STATE COMMUNICATIONS, 2000, 114 (01) : 33 - 37
  • [33] ELECTROLUMINESCENCE IN MOS CAPACITORS
    FALCONYGUAJARDO, C
    FEIGL, FJ
    BUTLER, SR
    ANTHONY, JB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C124 - C124
  • [34] A vertical MOS-gated Esaki tunneling transistor in silicon
    Hansch, W
    Fink, C
    Schulze, J
    Eisele, I
    THIN SOLID FILMS, 2000, 369 (1-2) : 387 - 389
  • [35] Photoresponse and electroluminescence of silicon-⟨porous silicon⟩-⟨chemically deposited metal⟩ structures
    Belyakov, LV
    Goryachev, DN
    Sreseli, OM
    SEMICONDUCTORS, 2000, 34 (11) : 1334 - 1337
  • [36] Photoresponse and electroluminescence of silicon-〈porous silicon〉-〈chemically deposited metal〉 structures
    L. V. Belyakov
    D. N. Goryachev
    O. M. Sreseli
    Semiconductors, 2000, 34 : 1334 - 1337
  • [37] Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon
    Matsumura, Kei
    Yamada, Ryuta
    Arima, Kenta
    Uchikoshi, Junichi
    Morita, Mizuho
    1ST INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR AND PLASMONICS - ACTIVE NANOSTRUCTURES FOR PHOTONIC DEVICES AND SYSTEMS, 2009, 25 (11): : 3 - 8
  • [38] Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes
    Liu, CW
    Lee, MH
    Chen, MJ
    Lin, CF
    Chern, MY
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (12) : 601 - 603
  • [39] Tunneling induced electroluminescence from metal-oxide-semiconductor structure on silicon
    Lin, CF
    Liu, CW
    Chen, MJ
    Lee, MH
    Lin, IC
    SILICON-BASED OPTOELECTRONICS II, 2000, 3953 : 37 - 45
  • [40] ON TUNNELING IN METAL-OXIDE-SILICON STRUCTURES
    WEINBERG, ZA
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5052 - 5056
12345