Resistive power in CMOS circuits

被引：3
|
作者：
El-Moursy, MA [1 ]
Friedman, EG [1 ]
机构：
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2004年 / 41卷 / 01期
基金：
美国国家科学基金会;
关键词：
interconnect resistance; dynamic power dissipation; short-circuit power dissipation; resistive losses;
D O I：
10.1023/B:ALOG.0000038278.71500.0c
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Interconnect resistance dissipates a portion of the total transient power in CMOS circuits. Conduction losses increase with larger interconnect resistance. It is shown in this paper that these losses do not add to the total power dissipation of a CMOS circuit through (IR)-R-2 losses. Interconnect resistance can, however, increase the short-circuit power of both the driver and load gates.
引用
收藏
页码：5 / 11
页数：7
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