RF MEMS and Si micromachining in high frequency applications

被引：0
|
作者：
Peroulis, D [1 ]
Margomenos, A [1 ]
Katehi, LPB [1 ]
机构：
[1] Univ Michigan, Radiat Lab, Dept Elect Engn & Comp Engn, Ann Arbor, MI 48109 USA
来源：
RAWCON 2002: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
RF MEMS and Si micromachining are key technologies in obtaining low-size, low-weight, and low-cost components for the coming generation of communications systems. These technologies allow both the development of high-performance microwave/millimeter-wave switches and switch-based tunable subsystems, as well as innovative and efficient architectures for interconnecting and packaging. The design of a low-voltage capacitive and a low-resistance DC-contact switch are discussed in the first part of the paper. In the second part we focus on a broadband low-loss on-wafer packaging scheme developed for the capacitive. MEMS switch.
引用
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页码：265 / 268
页数：4
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