MEMS and Si micromachined circuits for high-frequency applications

被引：69
|
作者：
Katehi, LPB [1 ]
Harvey, JF
Brown, E
机构：
[1] Purdue Univ, Sch Engn, W Lafayette, IN 47907 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[3] Army Res Off, Res Triangle Pk, NC 27709 USA
[4] Univ Calif Los Angeles, Los Angeles, CA 90095 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 03期
关键词：
high-frequency circuits; on-wafer packaging; RF MEMS; Si micromachining; three-dimensional integration;
D O I：
10.1109/22.989969
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF micromachining and microelectromechanical structure (MEMS) technology promise to provide an innovative approach in the development of effective and low-cost circuits and systems. This technology is expected to have significant application in the development of low-cost antenna arrays and reconfigurable apertures, due to its potential to support novel systems architectures. This paper presents a brief history and the state-of-the-art in the development of RF MEMS devices, with primary emphasis on switches and Si-micromachined circuit components for use in high-performance high-density on-wafer packaged circuits.
引用
收藏
页码：858 / 866
页数：9
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