A surface micromachining process for suspended RF-MEMS applications using porous silicon

被引：0
|
作者：
Y. Ding
Z. Liu
L. Liu
Z. Li
机构：
[1] Tsinghua University,Institute of Microelectronics
来源：
Microsystem Technologies | 2003年 / 9卷
关键词：
Aluminum; SiO2; Structural Material; Porous Silicon; Lateral Size;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A porous silicon (PS) surface micromachining technology for suspended RF-MEMS device fabrication is proposed. Using PS as sacrificial layer and SiO2 film as support membrane, suspended metallic structure has been realized. The lateral size of the obtained suspended inductor is 450 × 425 μm2. Sputtered aluminum with 1 μm thickness is used as structural materials. To avoid any damage of the Al structure during the process, TMAH solution with Si powder and (NH4)2S2O8 is used to remove the PS layer through etching holes.
引用
收藏
页码：470 / 473
页数：3
相关论文
共 50 条
  • [1] A surface micromachining process for suspended RF-MEMS applications using porous silicon
    Ding, Y
    Liu, Z
    Liu, L
    Li, Z
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2003, 9 (6-7): : 470 - 473
  • [2] RF-MEMS BAW filter using surface micromachining
    Cong, P
    Ren, TL
    Liu, JS
    Liu, LT
    INTEGRATED FERROELECTRICS, 2002, 50 : 71 - 79
  • [3] Design of RF-MEMS BAW filter using surface micromachining
    Cong, P
    Liu, YX
    Ren, TL
    Liu, LT
    INTERNATIONAL CONFERENCE ON SENSOR TECHNOLOGY (ISTC 2001), PROCEEDINGS, 2001, 4414 : 414 - 417
  • [4] Porous silicon: Technology and applications for micromachining and MEMS
    Mescheder, U
    SMART SENSORS AND MEMS, 2004, 181 : 273 - 288
  • [5] Study on porous silicon as a sacrificial layer used in RF-MEMS
    Cong, P
    Liu, LT
    Ding, Y
    DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS II, 2001, 4592 : 396 - 399
  • [6] RF-MEMS SPDT switch on silicon substrate for space applications
    Farinelli, P
    Giacomozzi, F
    Mannocchi, G
    Marcelli, R
    Margesin, B
    Mezzanotte, P
    Di Nardo, S
    Russer, P
    Sorrentino, R
    Vitulli, F
    Vietzorreck, L
    2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, 2004, : 151 - 154
  • [7] A Multimetal Surface Micromachining Process for Tunable RF MEMS Passives
    Shim, Yonghyun
    Wu, Zhengzheng
    Rais-Zadeh, Mina
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2012, 21 (04) : 867 - 874
  • [8] Lateral RF MEMS Switch Based on Surface Micromachining Process
    Du Guo-ping
    Zhu Jian
    Yu Yuan-Wei
    Jia Shi-xing
    Jiang Li-li
    MEMS/NEMS NANO TECHNOLOGY, 2011, 483 : 457 - 460
  • [9] High power applications of RF-MEMS
    Blondy, P.
    Palego, C.
    Pothier, A.
    Crunteanu, A.
    Gasseling, T.
    Champeaux, C.
    Catherinot, A.
    Tristant, P.
    2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 166 - 168
  • [10] RF-MEMS components for broadband applications
    Schauwecker, B
    Strohm, KM
    Simon, W
    Luy, JF
    2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 166 - 169
12345