A surface micromachining process for suspended RF-MEMS applications using porous silicon

被引：0
|
作者：
Y. Ding
Z. Liu
L. Liu
Z. Li
机构：
[1] Tsinghua University,Institute of Microelectronics
来源：
Microsystem Technologies | 2003年 / 9卷
关键词：
Aluminum; SiO2; Structural Material; Porous Silicon; Lateral Size;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A porous silicon (PS) surface micromachining technology for suspended RF-MEMS device fabrication is proposed. Using PS as sacrificial layer and SiO2 film as support membrane, suspended metallic structure has been realized. The lateral size of the obtained suspended inductor is 450 × 425 μm2. Sputtered aluminum with 1 μm thickness is used as structural materials. To avoid any damage of the Al structure during the process, TMAH solution with Si powder and (NH4)2S2O8 is used to remove the PS layer through etching holes.
引用
收藏
页码：470 / 473
页数：3
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