Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells

被引：11

作者：

Tsai, Yu-Lin ^{[1
,2
]}

Wang, Sheng-Wen ^{[1
,2
]}

Huang, Jhih-Kai ^{[1
,2
]}

Hsu, Lung-Hsing ^{[3
]}

Chiu, Ching-Hsueh ^{[1
,2
]}

Lee, Po-Tsung ^{[1
,2
]}

Yu, Peichen ^{[1
,2
]}

Lin, Chien-Chung ^{[3
]}

Kuo, Hao-Chung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Photon Syst, Coll Photon, Tainan 71150, Taiwan

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 24期

关键词：

WURTZITE SEMICONDUCTORS; AL;

D O I：

10.1364/OE.23.0A1434

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm(2) to 0.92 mA/cm(2), as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices. (C) 2015 Optical Society of America

引用

页码：A1434 / A1441

页数：8

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