Resonant Cavity Enhanced InGaN/GaN Multiple Quantum Well Solar Cells

We reported a new method of enhancing the quantum efficiency (eta) of InGaN/GaN multiple quantum well (MQW) solar cells using resonant cavity. The resonant cavity enhanced (RCE) structure is designed with a top mirror and a bottom distributed Bragg reflector (DBR). The origin of the enhancement in eta is the resonance-induced increase of the optical field which causes more photons to be absorbed in the InGaN absorption layers. We simulated the photovoltaic performances of InGaN/GaN MQW solar cells by comparing RCE-type and conventional solar cells. The results show the RCE-type solar cells exhibit enhancements in short-circuit current density by 2.12 times and conversion efficiency by 2.13 times, as compared to those of conventional solar cell.