Feasibility Analysis of High-Density Spin-Transfer-Torque Random-Access-Memory With Shared Access Transistor Structure

被引：1

作者：

Chen, An ^{[1
]}

机构：

[1] GlobalFoundires, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 12期

关键词：

STTRAM; 1T-nMTJ; selector; DIODE; CROSSBAR;

D O I：

10.1109/LED.2015.2495352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spin-transfer-torque random-access-memory (STTRAM) cell size is dominated by access transistors. A shared-access-transistor structure increases the number of bits per cell, but suffers from sneak leakage issues. It is proposed in this letter to use two-terminal selectors to enable this 1-transistor-n-MTJ cell design. Simulation based on reported nonlinear selectors provides the basic proof of feasibility, and identifies key technology requirements to optimize this high-density STTRAM.

引用

页码：1325 / 1328

页数：4

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