Feasibility Analysis of High-Density Spin-Transfer-Torque Random-Access-Memory With Shared Access Transistor Structure

被引：1
|
作者：
Chen, An [1 ]
机构：
[1] GlobalFoundires, Santa Clara, CA 95054 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 12期
关键词：
STTRAM; 1T-nMTJ; selector; DIODE; CROSSBAR;
D O I：
10.1109/LED.2015.2495352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spin-transfer-torque random-access-memory (STTRAM) cell size is dominated by access transistors. A shared-access-transistor structure increases the number of bits per cell, but suffers from sneak leakage issues. It is proposed in this letter to use two-terminal selectors to enable this 1-transistor-n-MTJ cell design. Simulation based on reported nonlinear selectors provides the basic proof of feasibility, and identifies key technology requirements to optimize this high-density STTRAM.
引用
收藏
页码：1325 / 1328
页数：4
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