Low-temperature electron mobility in parabolic quantum wells

被引：27
|
作者：
Seraide, RM [1 ]
Hai, GQ [1 ]
机构：
[1] USP, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP, Brazil
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2002年 / 32卷 / 02期
关键词：
D O I：
10.1590/S0103-97332002000200026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped AlGaAs wide parabolic quantum well. Electron mobilities in different subbands are calculated from the self-consistent results of the subband energy and wavefunction in the system. The scattering due to ionized impurities and alloy disorder is considered. We show the interplay of the different scattering mechanisms.
引用
收藏
页码：344 / 346
页数：3
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