Low-temperature electron mobility in parabolic quantum wells

被引：27
|
作者：
Seraide, RM [1 ]
Hai, GQ [1 ]
机构：
[1] USP, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP, Brazil
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2002年 / 32卷 / 02期
关键词：
D O I：
10.1590/S0103-97332002000200026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped AlGaAs wide parabolic quantum well. Electron mobilities in different subbands are calculated from the self-consistent results of the subband energy and wavefunction in the system. The scattering due to ionized impurities and alloy disorder is considered. We show the interplay of the different scattering mechanisms.
引用
收藏
页码：344 / 346
页数：3
相关论文
共 50 条
  • [31] LOW-TEMPERATURE ELECTRON-MOBILITY IN A DELTA-DOPED SEMICONDUCTOR
    GONZALEZ, LR
    KRUPSKI, J
    SZWACKA, T
    PHYSICAL REVIEW B, 1994, 49 (16): : 11111 - 11116
  • [32] Low-temperature electron mobility in doped semiconductors with high dielectric constant
    Nazaryan, Khachatur G.
    Feigel'man, Mikhail
    SCIPOST PHYSICS, 2023, 14 (03):
  • [33] MOBILITY CHANGES IN PBSNTE DUE TO LOW-TEMPERATURE ELECTRON-IRRADIATION
    GREEN, BA
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2243 - 2244
  • [34] Low-temperature electron mobility in a strictly 2D layer
    Vazifehshenas, Taraneh
    Noruzifar, Ehsan
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (01): : 174 - 177
  • [35] Low-temperature electron mobility in a real delta-doped semiconductor
    Gonzalez, LR
    Krupski, J
    Szwacka, T
    PHYSICAL REVIEW B, 1996, 54 (11): : 7658 - 7661
  • [36] Probing electron probability-density in parabolic quantum wells
    Salis, G
    Ensslin, K
    Campman, KB
    Maranowski, K
    Gossard, AC
    PHYSICA E, 1997, 1 (1-4): : 254 - 258
  • [37] Electron mobility in the GaAs/InGaAs/GaAs quantum wells
    Vainberg, V. V.
    Pylypchuk, A. S.
    Baidus, N. V.
    Zvonkov, B. N.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2013, 16 (02) : 152 - 161
  • [38] Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells
    Dobretsova, A. A.
    Kvon, Z. D.
    Braginskii, L. S.
    Entin, M. V.
    Mikhailov, N. N.
    SEMICONDUCTORS, 2018, 52 (11) : 1468 - 1472
  • [39] Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells
    A. A. Dobretsova
    Z. D. Kvon
    L. S. Braginskii
    M. V. Entin
    N. N. Mikhailov
    Semiconductors, 2018, 52 : 1468 - 1472
  • [40] LOW-TEMPERATURE THERMOREFLECTANCE OF ALXGA1-XAS GAAS QUANTUM-WELLS
    BELLANI, V
    GUIZZETTI, G
    NOSENZO, L
    REGUZZONI, E
    BOSACCHI, A
    FRANCHI, S
    SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (02) : 147 - 152
12345