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- [1] Analysis of Within-Die Process Variation in 65nm FPGAs2011 12TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), 2011, : 716 - 720Tuan, Tim论文数: 0 引用数: 0 h-index: 0机构: Xilinx Res Labs, San Jose, CA 95124 USA Xilinx Res Labs, San Jose, CA 95124 USALesea, Austin论文数: 0 引用数: 0 h-index: 0机构: Xilinx Res Labs, San Jose, CA 95124 USA Xilinx Res Labs, San Jose, CA 95124 USAKingsley, Chris论文数: 0 引用数: 0 h-index: 0机构: Xilinx Res Labs, San Jose, CA 95124 USA Xilinx Res Labs, San Jose, CA 95124 USATrimberger, Steve论文数: 0 引用数: 0 h-index: 0机构: Xilinx Res Labs, San Jose, CA 95124 USA Xilinx Res Labs, San Jose, CA 95124 USA
- [2] Intel makes 0.57μm2 SRAM cell using 65nm logicSOLID STATE TECHNOLOGY, 2004, 47 (02) : 20 - 20不详论文数: 0 引用数: 0 h-index: 0
- [3] The 65nm Tunneling Field Effect Transistor (TFET) 0.68μm2 6T memory cell and multi-Vth devicePROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 173 - 176Nirschl, T论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyHenzler, S论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyFischer, J论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyBargagli-Stoffi, A论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyFulde, M论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanySterkel, M论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyTeichmann, P论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanySchaper, U论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyEinfeld, J论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyLinnenbank, C论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanySedlmeir, J论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyWeber, C论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyHeinrich, R论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyOstermayr, M论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyOlbrich, A论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyDobler, B论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyRuderer, E论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyKakoschke, R论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanySchrüfer, K论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyGeorgakos, G论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanyHansch, W论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, GermanySchmitt-Landsiedel, D论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany Tech Univ Munich, Inst Tech Elect, D-80290 Munich, Germany
- [4] A Fully Integrated 5510-μm2 Process Monitor and Threshold Voltage Extractor Circuit in 28 nmIEEE SOLID-STATE CIRCUITS LETTERS, 2024, 7 : 279 - 282Shpernat, Ido论文数: 0 引用数: 0 h-index: 0机构: Bar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, Israel Bar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, IsraelFeldman, Asaf论文数: 0 引用数: 0 h-index: 0机构: Bar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, Israel Bar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, Israel论文数: 引用数: h-index:机构:
- [5] A 0.127 μm2 high performance 65nm SOI based embedded DRAM for on-processor applications2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 310 - +Wang, G.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USACheng, K.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAHo, H.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAFaltermeier, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAKong, W.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAKim, H.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USACai, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, SRDC, Essex Jct, VT 05452 USATanner, C., III论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAMcStay, K.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USABalasubramanyam, K.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAPei, C.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USANinomiya, L.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USALi, X.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAWinstel, K.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USADobuzinsky, D.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USANaeem, M.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAZhang, R.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USADeschner, R.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USABrodsky, M. J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAAllen, S.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAYates, J., III论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAFeng, Y.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAMarchetti, P.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USANorris, C.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USACasarotto, D.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USABenedict, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAKniffin, A.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAParise, D.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAKhan, B.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USABarth, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAParries, P.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAKirihata, T.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USANorum, J.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USAIyer, S. S.论文数: 0 引用数: 0 h-index: 0机构: IBM Corp, SRDC, Essex Jct, VT 05452 USA IBM Corp, SRDC, Essex Jct, VT 05452 USA
- [6] A 65nm low power CMOS platform with 0.495μm2 SRAM for digital processing and mobile applications2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2005, : 216 - 217Utsumi, K论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanMorifuji, E论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanKanda, M论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanAota, S论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanYoshida, T论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanHonda, K论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanMatsubara, Y论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanYamada, S论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, JapanMatsuoka, F论文数: 0 引用数: 0 h-index: 0机构: Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan Semicond Co, Toshiba Corp, Syst LSI Div, Yokohama, Kanagawa 2358582, Japan
- [7] A 65nm NOR flash technology with 0.042μm2 cell size for high performance multilevel applicationIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 869 - 872Servalli, G论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyBrazzelli, D论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyCamerlenghi, E论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyCapetti, G论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyCostantini, S论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyCupeta, C论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyDeSimone, D论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyGhetti, A论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyGhilardi, T论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyGulli, P论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyMariani, M论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalyPavan, A论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, ItalySomachini, R论文数: 0 引用数: 0 h-index: 0机构: STMicroelect, FTM Adv R&D, I-20041 Milan, Italy STMicroelect, FTM Adv R&D, I-20041 Milan, Italy
- [8] A 1.39nJ/Conversion CMOS Temperature Sensor with 173 μm2 Sensing Core for Remote Sensing in 65nm CMOSPROCEEDINGS OF 2023 THE 8TH INTERNATIONAL CONFERENCE ON SYSTEMS, CONTROL AND COMMUNICATIONS, ICSCC 2023, 2023, : 24 - 29Shui, Yuhang论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, ZJU UIUC Inst, Haining, Zhejiang, Peoples R China Zhejiang Univ, ZJU UIUC Inst, Haining, Zhejiang, Peoples R ChinaChen, Linhui论文数: 0 引用数: 0 h-index: 0机构: Tuowei Elect Technol Shanghai Co Ltd, Beijing, Peoples R China Zhejiang Univ, ZJU UIUC Inst, Haining, Zhejiang, Peoples R ChinaWang, Aili论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, ZJU UIUC Inst, Haining, Zhejiang, Peoples R China Zhejiang Univ, ZJU UIUC Inst, Haining, Zhejiang, Peoples R China
- [9] Soft error immune 0.46μm2 SRAM cell with MIM node capacitor by 65nm CMOS technology for ultra high speed SRAM2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 289 - 292Jung, SM论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaLim, H论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaCho, W论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaCho, H论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaHong, H论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaJeong, J论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaJung, S论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaPark, H论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaSon, B论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaJang, Y论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South KoreaKim, K论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea Samsung Elect, R&D Ctr, Yongin, Kyungki Do, South Korea
- [10] A 0.53pJ•K2 7000μm2 Resistor-Based Temperature Sensor with an Inaccuracy of ±0.35°C (3σ) in 65nm CMOS2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC), 2018, : 322 - +Choi, Woojun论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Seoul, South Korea Yonsei Univ, Seoul, South KoreaLee, Yong-Tae论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Seoul, South Korea Yonsei Univ, Seoul, South KoreaKim, Seonhong论文数: 0 引用数: 0 h-index: 0机构: Sk Hynix, Icheon, South Korea Yonsei Univ, Seoul, South KoreaLee, Sanghoon论文数: 0 引用数: 0 h-index: 0机构: Sk Hynix, Icheon, South Korea Yonsei Univ, Seoul, South KoreaJang, Jieun论文数: 0 引用数: 0 h-index: 0机构: Sk Hynix, Icheon, South Korea Yonsei Univ, Seoul, South KoreaChun, Junhyun论文数: 0 引用数: 0 h-index: 0机构: Sk Hynix, Icheon, South Korea Yonsei Univ, Seoul, South KoreaMakinwa, Kofi A. A.论文数: 0 引用数: 0 h-index: 0机构: Delft Univ Technol, Delft, Netherlands Yonsei Univ, Seoul, South KoreaChae, Youngcheol论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Seoul, South Korea Yonsei Univ, Seoul, South Korea