Electron-hole pair generation in SiC high-temperature alpha particle detectors

被引：27

作者：

Garcia, Timothy R. ^{[1
]}

Kumar, Ashutosh ^{[2
]}

Reinke, Benjamin ^{[1
]}

Blue, Thomas E. ^{[1
]}

Windl, Wolfgang ^{[2
]}

机构：

[1] Ohio State Univ, Nucl Engn Program, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

SPECTROMETRY;

D O I：

10.1063/1.4824774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate alpha-particle detection in an n-type 4H-SiC Schottky diode detector up to a temperature of 500 degrees C using an Am-241 disc source. The measured spectra were used to calculate the electron-hole pair creation energy in 4H-SiC and its non-bandgap contribution, which are both found to decrease with increasing temperature. The full width at half maximum (FWHM) of the measured alpha-energy peaks was found to increase exponentially with temperature due to an exponential increase of leakage current. For our measurement system, above 300 degrees C, where the leakage current was 10(-6) A, this increase exceeded the FWHM at room temperature. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 50 条

[41] Phase Diagram of High-Temperature Electron-Hole Quantum Droplet in Two-Dimensional Semiconductors
Yu, Yiling
Li, Guoqing
Xu, Yan
Hu, Chong
Liu, Xiaoze
Cao, Linyou
ACS NANO, 2023, 17 (16) : 15474 - 15481
[42] High-Temperature Thermoelectricity in Narrow-Gap Semiconductor SmS with Strong Electron-Hole Asymmetry
Liao, Huijun
Zhou, Zizhen
Zheng, Sikang
Huang, Yuling
Han, Guang
Wang, Guoyu
Huang, Zhengyong
Lu, Xu
Li, Jian
Zhou, Xiaoyuan
ADVANCED ENERGY MATERIALS, 2023, 13 (12)
[43] Electron-hole pair creation energy and Fano factor temperature dependence in silicon
Mazziotta, M. N.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 584 (2-3): : 436 - 439
[44] High-harmonic generation in α-quartz by electron-hole recombination
Otobe, T.
PHYSICAL REVIEW B, 2016, 94 (23)
[45] THE STICKING OF A REACTIVE PARTICLE ON A METAL - ELECTRON-HOLE PAIR AND PHONON ENERGY-LOSS
BRIVIO, GP
GRIMLEY, TB
DEVESCOVI, A
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 45 : 391 - 402
[46] Fast electron initiated electron-hole pair creation in semiconductors
Bodie, C. S.
Barnett, A. M.
JOURNAL OF APPLIED PHYSICS, 2024, 136 (16)
[47] Control of electron-hole pair generation by biharmonic voltage drive of a quantum point contact
Vanevic, Mihajlo
Belzig, Wolfgang
PHYSICAL REVIEW B, 2012, 86 (24):
[48] High-temperature electron and hole mobility in CdTe
Turkevych, I
Grill, R
Franc, J
Belas, E
Höschl, P
Moravec, P
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (10) : 1064 - 1066
[49] Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC
Lo Giudice, A
Fizzotti, F
Manfredotti, C
Vittone, E
Nava, F
APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
[50] Terahertz Response of an Interacting Confined Electron-Hole Pair
Klimovic, Filip
Ostatnicky, Tomas
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ, 2023,

← 1 2 3 4 5 →