Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC

被引：23

作者：

Lo Giudice, A

Fizzotti, F

Manfredotti, C

Vittone, E ^{[1
]}

Nava, F

机构：

[1] Univ Turin, CNR, INFM, Expt Phys Dept, Turin, Italy

[2] Univ Turin, NIS Ctr Excellence, Turin, Italy

[3] Univ Modena, Dept Phys, I-41100 Modena, Italy

[4] Univ Modena, Ist Nazl Fis Nucl, I-41100 Modena, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2135507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pulse height response for He and H ions with energies between 1 and 6 MeV incident upon n-type 4H-SiC epitaxial Schottky diodes has been investigated. The average amount of energy, epsilon, given up by the incident radiation to form electron-hole pair in this material was obtained by comparison with the average energy loss per pair in silicon detectors and it was found to be (7.78 +/- 0.05) eV at room temperature. This value is smaller than that foreseen by Klein's semiempirical linear relationship between epsilon and the semiconductor band gap. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 15 条

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2024, 1064
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APPLIED PHYSICS LETTERS, 2006, 89 (04)
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APPLIED PHYSICS LETTERS, 2013, 102 (03)
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