Step height oscillations during layer-by-layer growth of Pb on Ge(001)

被引：46
|
作者：
Crottini, A
Cvetko, D
Floreano, L
Gotter, R
Morgante, A
Tommasini, F
机构：
[1] UNIV LJUBLJANA,JOZEF STEFAN INST,LJUBLJANA,SLOVENIA
[2] UNIV TRIESTE,DIPARTMENTO FIS,I-34127 TRIESTE,ITALY
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.79.1527
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Heteroepitaxial growth of Pb on the Ge(001) surface has been studied by He atom scattering. For low substrate temperatures, Pb is found to grow layer by layer with (111) orientation. A detailed analysis of the specular peak profile as a function of the He wave vector reveals that the step height of the growing monatomic terraces oscillates with the him thickness. This variation, initially as large as +/-15% around the value of the Pb(Ill) bulk interlayer spacing, gradually dampens out after the deposition of a dozen monolayers. This is direct evidence of quantum size effects affecting the interlayer distance of a growing metal film.
引用
收藏
页码：1527 / 1530
页数：4
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