Step height oscillations during layer-by-layer growth of Pb on Ge(001)

被引：46
|
作者：
Crottini, A
Cvetko, D
Floreano, L
Gotter, R
Morgante, A
Tommasini, F
机构：
[1] UNIV LJUBLJANA,JOZEF STEFAN INST,LJUBLJANA,SLOVENIA
[2] UNIV TRIESTE,DIPARTMENTO FIS,I-34127 TRIESTE,ITALY
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.79.1527
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Heteroepitaxial growth of Pb on the Ge(001) surface has been studied by He atom scattering. For low substrate temperatures, Pb is found to grow layer by layer with (111) orientation. A detailed analysis of the specular peak profile as a function of the He wave vector reveals that the step height of the growing monatomic terraces oscillates with the him thickness. This variation, initially as large as +/-15% around the value of the Pb(Ill) bulk interlayer spacing, gradually dampens out after the deposition of a dozen monolayers. This is direct evidence of quantum size effects affecting the interlayer distance of a growing metal film.
引用
收藏
页码：1527 / 1530
页数：4
相关论文
共 50 条
  • [21] Layer-by-layer heteroepitaxial growth process of a BaO layer on SrTiO3(001) as investigated by molecular dynamics
    Kubo, M
    Oumi, Y
    Miura, R
    Stirling, A
    Miyamoto, A
    Kawasaki, M
    Yoshimoto, M
    Koinuma, H
    JOURNAL OF CHEMICAL PHYSICS, 1998, 109 (20): : 9148 - 9154
  • [22] Height-dependent nucleation and ideal layer by layer growth in Pb/Pb(111)/Si(111)
    Binz, S. M.
    Hupalo, M.
    Tringides, M. C.
    PHYSICAL REVIEW B, 2008, 78 (19)
  • [23] Layer-by-layer growth of Ag on a GaN(001) surface (vol 82, pg 1389, 2003)
    Wu, KH
    Xue, QZ
    Bakhtizin, RZ
    Fujikawa, Y
    Li, X
    Nagao, T
    Xue, QK
    Sakurai, T
    APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3991 - 3991
  • [24] Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs(001)
    Jenichen, B.
    Kaganer, V. M.
    Braun, W.
    Herfort, J.
    Shayduk, R.
    Ploog, K. H.
    THIN SOLID FILMS, 2007, 515 (14) : 5611 - 5614
  • [25] Layer-by-layer growth of GaAs(001) studied by in situ synchrotron X-ray diffraction
    Braun, W
    Jenichen, B
    Kaganer, VM
    Shtukenberg, AG
    Däweritz, L
    Ploog, KH
    SURFACE SCIENCE, 2003, 525 (1-3) : 126 - 136
  • [26] Molecular dynamics simulation on a layer-by-layer homoepitaxial growth process of SrTiO3(001)
    Kubo, M
    Oumi, Y
    Miura, R
    Stirling, A
    Miyamoto, A
    Kawasaki, M
    Yoshimoto, M
    Koinuma, H
    JOURNAL OF CHEMICAL PHYSICS, 1998, 109 (19): : 8601 - 8606
  • [27] ANISOTROPIC GROWTH AND LAYER-BY-LAYER EPITAXY
    MO, YW
    KARIOTIS, R
    SAVAGE, DE
    LAGALLY, MG
    SURFACE SCIENCE, 1989, 219 (03) : L551 - L559
  • [28] Layer-by-layer growth of metal overlayers
    Germar, R.
    Duerr, W.
    Krewer, J.W.
    Pescia, D.
    Gudat, W.
    Applied Physics A: Solids and Surfaces, 1988, 47 (04): : 393 - 398
  • [29] LAYER-BY-LAYER GROWTH OF METAL OVERLAYERS
    GERMAR, R
    DURR, W
    KREWER, JW
    PESCIA, D
    GUDAT, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 47 (04): : 393 - 398
  • [30] 4-Monolayer-height layer-by-layer growth and increase of the critical thickness of Ge heteroepitaxy on boron-preadsorbed Si(111) surface
    Kumagai, Y
    Ishimoto, K
    Mori, R
    Tee, KM
    Ishibashi, T
    Kawabe, M
    Hasegawa, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (4B): : L476 - L478
12345