Preferential heights in the growth of Ag islands on Si(111)-(7 x 7) surfaces

被引：42
|
作者：
Goswami, D. K.
Bhattacharjee, K.
Satpati, B.
Roy, S.
Satyam, P. V.
Dev, B. N.
机构：
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] Indian Assoc Cultivat Sci, Kolkata 700032, W Bengal, India
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 03期
关键词：
overlayers on surfaces; scanning tunneling microscopy; preferential heights in island growth; Ag growth on Si;
D O I：
10.1016/j.susc.2006.10.026
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growth behavior of thin Ag films on Si substrates at room temperature has been investigated by scanning tunneling microscopy and reflection high energy electron diffraction. In the layer-plus-island growth Ag islands show strongly preferred atomic scale heights and flat top. At low coverage (1 ML), islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number (2,4,6....) of Ag atomic layers. Beyond some coverage the height preference vanishes due to the appearance of screw dislocations and spiral growth. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：603 / 608
页数：6
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