Study of As precipitates in LEC SI-GaAs wafer by Raman probe

被引：4

作者：

Zhang, FY ^{[1
]}

Tu, HL ^{[1
]}

Wang, YH ^{[1
]}

Qian, JY ^{[1
]}

Wang, HT ^{[1
]}

Wang, J ^{[1
]}

Song, P ^{[1
]}

机构：

[1] Gen Res Inst NonFerrous Met, Res Ctr Semi Cond Engn, Beijing 100088, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 2-3期

关键词：

Raman spectrum; As precipitate; dislocation; GaAs;

D O I：

10.1016/S0921-5107(00)00349-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As precipitates in the subsurface layer of LEC SI-GaAs substrates are characterized by Raman microprobe with a spatial resolution of 2 mu m. We find that the LO line of GaAs at the As precipitate broadens asymmetrically because As precipitates and dislocations introduce disorder in the crystal. The compressive strain introduced by As precipitates results in the central frequency of LO line shifting to the blue. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：139 / 142

页数：4

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